개요

HARC Etching 및 Via/Dama Etching용 CCP 타입 Plasma Etcher 

특징

Process performance

- Specialized Critical Etch Process
   : DRAM, Flash, 3D NAND and Logic Applications
- Low Particle / Verticle Etching
- High Etch Rate / High Mask Selectivity
- Precise CD and CD Uniformity Control
- Low Micro-loading Effect

Productivity / Hardware

- Cluster Transfer Module : Max. 6 Chambers
- RF Sync Pulse Function : High Aspect Ratio
- Radial Uniformity Control HW : Gas and Temperature 
- Low C.o.O / Long MTBC
- High Throughput