Overview

CCP Type Plasma Etcher for HARC Etching and Via/Dama Etching Process 

Feature

Process performance

- Specialized Critical Etch Process
  : DRAM, Flash, 3D NAND and Logic Applications
- Low Particle / Verticle Etching
- High Etch Rate / High Mask Selectivity 
- Precise CD and CD Uniformity Control
- Low Micro-loading Effect

Productivity / Hardware

- Cluster Transfer Module : Max. 6 Chambers
- RF Sync Pulse Function : High Aspect Ratio
- Radial Uniformity Control HW : Gas and Temperature
- Low C.o.O / Long MTBC
- High Throughput