Overview

Ion-Beam etching is a versatile process for pattern delineation and material modification.

The low pressure, line-of-sight nature of beam techniques provides a flexibility of

directional bombardment not available in other plasma processes. The ability to etch

virtually any material by the sputtering process opens a wide variety of diverse

applications.

Features

≻ High selectivity, uniform plasma

≻ Simple configuration makes maintenance easy

≻ The physical and chemical etching systems are controlled independently

≻ Low damage & contamination

≻ Physical etching using Ar Ion-Beam distributes reactive gases such as Cl2, He, BCl3 evenly around substrate.