Showerhead type Plasma-Enhanced ALD (PE-ALD)

ㆍPlasma process & treatment

ㆍAdjustable the gap between showerhead and substrate

ㆍVariable gas delivery system : Bubbler, Vaporizer, LDS

ㆍCompletely separated source delivery

ㆍConfiguration ALD/CVD mode process

ㆍGood film uniformity & quality

ㆍProcess temperature : up to 500°C

ㆍPrecursor canister : 4EA(standard)

ㆍSubstrate Size : 4 ~ 12” wafer

ㆍApplications
   Dielectric thin films : Al2O3, HfO2, ZrO2, TiO2, ZnO2, ZnS, GST, Laminate films, etc.
   Nitride films : AlN, TiN, TiAlN, TaN, etc.
   Metal films : Ru, Co, Ti, Ni, etc.