|Model||Ion Milling Series|
Ion-Beam etching is a versatile process for pattern delineation and material modification.
The low pressure, line-of-sight nature of beam techniques provides a flexibility of
directional bombardment not available in other plasma processes. The ability to etch
virtually any material by the sputtering process opens a wide variety of diverse
≻ High selectivity, uniform plasma
≻ Simple configuration makes maintenance easy
≻ The physical and chemical etching systems are controlled independently
≻ Low damage & contamination
≻ Physical etching using Ar Ion-Beam distributes reactive gases such as Cl2, He, BCl3 evenly around substrate.
2” - 6” (50.8mm - 150mm)
Operating pressure (Torr)
> 1.0E-4 Torr
Uniformity within substrate /
substrate to substrate surfaces
± 5% max.
3cm ~ 20scm (@1” ~ 8”)
Tilt / Rotation / Cooling