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Product Name
Model ICP-RIE Series
Series Etcher
Catalog
Product Description

Overview

An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is

supplied by electrical currents produced by electromagnetic induction; that is, by time-

varying magnetic fields. In its simplest form, an inductively coupled plasma consists of a

vacuum vessel, into which the gas to be ionized is administered, and an induction coil,

driven by a source of RF power. The coil is generally separated from the vacuum region

by a dielectric window. The wide range of applications for RF-driven, inductively

coupled plasma sources has recently expanded into processing tools for coating or

etching systems in the microelectronics industry.

Specifications

ITEM

SPECIFICATIONS

System configuration

R&D

Substrate size

2” - 6” (50.8mm - 150mm)

Etch Uniformity

1.06±% within 3” wafer

Etch rate

1.16µm/min

Process Chamber

Al anodized Chamber

Substrate

He backside cooling / Bias / Chiller (-20℃ ~ 50℃)

Source

ICP source with plasma spiral coil

Korea Vacuum Tech  ICP-RIE Series

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