Application
- Etch, CVD (MO, PE, HDP, LP) Implant, Sputter
- Nanotechnology process with high particulate levels
- Thin film photovoltaic panels
Features
- Protects process environment from back-streaming powder in the event of dry pump failure
- Reduces expensive down time in powder producing process Fast pneumatic actuation-closes in
<0.5 seconds(Normal 0.7seconds)
- Long cycle life under adverse process conditions
Options
- Available with either ISO 100-K or ISO 160-K flanges
- 1, 2, 3 or 4 channel options
Pressure range | 1 x 10-7 mbar to 1.2 bar | |
Leak rate : body, seat | < 1 x 10-7 mbar.ℓ/s | |
Differential pressure on the gate | ≤ 1.2 bar in either direction | |
Material | Valve body, Bonnet, Gate | SS304 |
Welded bellows | SS316L | |
Valve actuator | AL6061, SS304 | |
Seal Materials | FKM(VITON) | |
Temperature | Valve body | 120℃ |
Valve actuator | 60℃ | |
Operation | Double acting | |
Cycle until first service | 100,000 | |
Position sensor | SMC (D-A93) | |
