Information
Overview
- Summary
- Okmetic is the world's 7th largest silicon wafer manufacturer, supplying advanced customized silicon wafers for MEMS, sensors, RF filters and devices, and power applications. The company contributes to improving device performance and reducing total cost of ownership for customers through its high value-added, tailored silicon wafer solutions. It holds a broad portfolio and technological leadership, especially in the 150-200mm wafer market.Okmetic is the world's 7th largest silicon wafer manufacturer, supplying advanced customized silicon wafers for MEMS, sensors, RF filters and devices, and power applications. The company contributes to improving device performance and reducing total cost of ownership for customers through its high value-added, tailored silicon wafer solutions. It holds a broad portfolio and technological leadership, especially in the 150-200mm wafer market.
- Key Products/Technologies
- Silicon-On-Insulator (SOI) Wafers: Okmetic offers a comprehensive range of SOI products including Bonded SOI (BSOI), Cavity SOI (C-SOI®), Enhanced SOI (E-SOI®), EC-SOI, Terrace Free SOI, High Resistivity BSOI, and Power Management SOI wafers. BSOI provides an optimal platform for MEMS, sensor, power, and RF device manufacturing, with variations like 0.3 SOI, DSOI, LSOI, and Thick SOI. C-SOI® features built-in sealed cavities, acting as a partially built sensor or electronic device, streamlining MEMS and RF manufacturing processes and enhancing cost-effectiveness. E-SOI® offers exceptional device layer thickness uniformity of ±0.1 μm for 200mm wafers, making it suitable for silicon photonics and optical MEMS devices. EC-SOI combines the uniformity benefits of E-SOI® with the cavity structures of C-SOI®, providing an optimized platform for advanced MEMS devices such as PMUTs and CMUTs. Terrace Free SOI maximizes the usable area of wafers, enabling more chips per wafer. High Resistivity BSOI wafers are designed for high-frequency mm-wave devices with suspended low-loss structures. Power Management SOI wafers are optimized platforms for power device gate drivers, Battery and Power Management ICs, Intelligent Power Modules, and other Smart Power devices.Silicon-On-Insulator (SOI) Wafers: Okmetic offers a comprehensive range of SOI products including Bonded SOI (BSOI), Cavity SOI (C-SOI®), Enhanced SOI (E-SOI®), EC-SOI, Terrace Free SOI, High Resistivity BSOI, and Power Management SOI wafers. BSOI provides an optimal platform for MEMS, sensor, power, and RF device manufacturing, with variations like 0.3 SOI, DSOI, LSOI, and Thick SOI. C-SOI® features built-in sealed cavities, acting as a partially built sensor or electronic device, streamlining MEMS and RF manufacturing processes and enhancing cost-effectiveness. E-SOI® offers exceptional device layer thickness uniformity of ±0.1 μm for 200mm wafers, making it suitable for silicon photonics and optical MEMS devices. EC-SOI combines the uniformity benefits of E-SOI® with the cavity structures of C-SOI®, providing an optimized platform for advanced MEMS devices such as PMUTs and CMUTs. Terrace Free SOI maximizes the usable area of wafers, enabling more chips per wafer. High Resistivity BSOI wafers are designed for high-frequency mm-wave devices with suspended low-loss structures. Power Management SOI wafers are optimized platforms for power device gate drivers, Battery and Power Management ICs, Intelligent Power Modules, and other Smart Power devices.
- Single Side Polished (SSP) Wafers: These wafers serve as a platform for surface MEMS, capping, RF, and power devices, with customized solutions enabled by in-house crystal growing and a wide selection of wafer materials. Available in 150-200mm diameters, they offer customizable parameters including dopants (antimony, arsenic, phosphorus, boron), crystal orientations (<100>, <110>, <111>, or off-oriented), thicknesses (400 to 1,150 µm), and resistivities (<0.001 to >10,000 Ohm-cm).Single Side Polished (SSP) Wafers: These wafers serve as a platform for surface MEMS, capping, RF, and power devices, with customized solutions enabled by in-house crystal growing and a wide selection of wafer materials. Available in 150-200mm diameters, they offer customizable parameters including dopants (antimony, arsenic, phosphorus, boron), crystal orientations (<100>, <110>, <111>, or off-oriented), thicknesses (400 to 1,150 µm), and resistivities (<0.001 to >10,000 Ohm-cm).
- Double Side Polished (DSP) Wafers: Supplied since 1985, these wafers are used as a platform for surface MEMS, capping, RF, and power devices. They provide excellent thickness uniformity, orientation accuracy, and crystal quality, making them ideal for MEMS device manufacturing requiring double-sided lithography, wafer bonding, or precise alignment marks. Available in 150-200mm diameters, with customizable parameters similar to SSP wafers for dopants, crystal orientation, thickness, and resistivity.Double Side Polished (DSP) Wafers: Supplied since 1985, these wafers are used as a platform for surface MEMS, capping, RF, and power devices. They provide excellent thickness uniformity, orientation accuracy, and crystal quality, making them ideal for MEMS device manufacturing requiring double-sided lithography, wafer bonding, or precise alignment marks. Available in 150-200mm diameters, with customizable parameters similar to SSP wafers for dopants, crystal orientation, thickness, and resistivity.
- High Resistivity RFSi® Wafers: Manufactured using the Advanced Magnetic Czochralski (A-MCz®) crystal growth method, these SSP and DSP wafers combine low oxygen content (low Oi) with very high and stable resistivities, up to >7,000 Ohm-cm. Engineered High Resistivity wafers include an engineered trap-rich layer to further minimize RF losses, while Engineered Ultra High Resistivity wafers boast over 10,000 Ohm-cm resistivity and a highly efficient trap-rich layer, enabling near-zero substrate-induced losses and nonlinearities for RF devices.High Resistivity RFSi® Wafers: Manufactured using the Advanced Magnetic Czochralski (A-MCz®) crystal growth method, these SSP and DSP wafers combine low oxygen content (low Oi) with very high and stable resistivities, up to >7,000 Ohm-cm. Engineered High Resistivity wafers include an engineered trap-rich layer to further minimize RF losses, while Engineered Ultra High Resistivity wafers boast over 10,000 Ohm-cm resistivity and a highly efficient trap-rich layer, enabling near-zero substrate-induced losses and nonlinearities for RF devices.
- Patterned Wafers and TSV Wafers: Okmetic provides SSP, DSP, and SOI wafers with built-in patterns and buried cavities (C-SOI®). Polysilicon-filled Through Silicon Vias (TSVs) enable isolated electrical connections through silicon wafers, reducing die size and facilitating interlayer electrical connections and 3D MEMS integration.Patterned Wafers and TSV Wafers: Okmetic provides SSP, DSP, and SOI wafers with built-in patterns and buried cavities (C-SOI®). Polysilicon-filled Through Silicon Vias (TSVs) enable isolated electrical connections through silicon wafers, reducing die size and facilitating interlayer electrical connections and 3D MEMS integration.
- Core Advantages
- Technological Leadership and Expertise: Okmetic holds technological leadership in advanced customized silicon wafers for MEMS, sensors, RF filters, and power devices. As a pioneer in SOI wafer technology, the company began development in the 1990s and has been volume producing SOI wafers since 2001, accumulating over two decades of expertise.Technological Leadership and Expertise: Okmetic holds technological leadership in advanced customized silicon wafers for MEMS, sensors, RF filters, and power devices. As a pioneer in SOI wafer technology, the company began development in the 1990s and has been volume producing SOI wafers since 2001, accumulating over two decades of expertise.
- Extensive Product Portfolio and Customized Solutions: The company offers one of the market's most extensive wafer portfolios, including 150-200mm SSP, DSP, SOI, patterned, High Resistivity RFSi®, Power, and TSV wafers. Okmetic provides tailored silicon wafer solutions that improve yield, enhance process efficiency, and serve as platforms for developing new, advanced applications, meeting specific customer process and product requirements.Extensive Product Portfolio and Customized Solutions: The company offers one of the market's most extensive wafer portfolios, including 150-200mm SSP, DSP, SOI, patterned, High Resistivity RFSi®, Power, and TSV wafers. Okmetic provides tailored silicon wafer solutions that improve yield, enhance process efficiency, and serve as platforms for developing new, advanced applications, meeting specific customer process and product requirements.
- Vertically Integrated Production and Quality Control: In-house crystal growth and wafering processes ensure superior quality and shorter time-to-market for SSP, DSP, and SOI wafers. The company has been a qualified DSP wafer supplier for the automotive industry since the 1990s, demonstrating a long history of meeting stringent semiconductor quality standards. Operations adhere to ISO 9001:2015, ISO 14001:2015, and IATF 16949:2016 standards for quality and environmental management.Vertically Integrated Production and Quality Control: In-house crystal growth and wafering processes ensure superior quality and shorter time-to-market for SSP, DSP, and SOI wafers. The company has been a qualified DSP wafer supplier for the automotive industry since the 1990s, demonstrating a long history of meeting stringent semiconductor quality standards. Operations adhere to ISO 9001:2015, ISO 14001:2015, and IATF 16949:2016 standards for quality and environmental management.
- Continuous R&D Investment and Innovation: Okmetic has invested approximately 500 million euros in its Vantaa plant from 2017 to 2025 to expand production capacity, including new patterning lines and increased production of SOI, High Resistivity RFSi®, and power wafers. SOI wafer capacity was doubled in 2020, and a major fab expansion for 200mm wafer production was completed in early 2026. The company actively participates in various R&D projects such as WIBASE, TimeZero, and ARCTIC EU, contributing to next-generation technology development.Continuous R&D Investment and Innovation: Okmetic has invested approximately 500 million euros in its Vantaa plant from 2017 to 2025 to expand production capacity, including new patterning lines and increased production of SOI, High Resistivity RFSi®, and power wafers. SOI wafer capacity was doubled in 2020, and a major fab expansion for 200mm wafer production was completed in early 2026. The company actively participates in various R&D projects such as WIBASE, TimeZero, and ARCTIC EU, contributing to next-generation technology development.
- Global Customer Base and Sales Network: Okmetic operates sales and customer support organizations in Finland, Germany, France, the United States, Japan, Singapore, and China, providing global service to its customers. It also has sales agents in South Korea and Taiwan, maintaining strong, decades-long relationships with leading semiconductor companies worldwide.Global Customer Base and Sales Network: Okmetic operates sales and customer support organizations in Finland, Germany, France, the United States, Japan, Singapore, and China, providing global service to its customers. It also has sales agents in South Korea and Taiwan, maintaining strong, decades-long relationships with leading semiconductor companies worldwide.
- Target Industries
- MEMS and Sensors (e.g., pressure sensors, accelerometers, microphones, inertial sensors, ultrasonic transducers)MEMS and Sensors (e.g., pressure sensors, accelerometers, microphones, inertial sensors, ultrasonic transducers)
- RF Filters and Devices (e.g., BAW filters, SAW filters, IPD, silicon interposers, RFICs, quantum devices, RF switches, RF timing devices)RF Filters and Devices (e.g., BAW filters, SAW filters, IPD, silicon interposers, RFICs, quantum devices, RF switches, RF timing devices)
- Power Devices and Power Applications (e.g., power device gate drivers, Battery and Power Management ICs, Intelligent Power Modules, Smart Power devices)Power Devices and Power Applications (e.g., power device gate drivers, Battery and Power Management ICs, Intelligent Power Modules, Smart Power devices)
- Smartphones and Portable DevicesSmartphones and Portable Devices
- Automotive ElectronicsAutomotive Electronics
- Industrial and Healthcare Systems (e.g., fluid delivery devices, temperature sensors, biosensors, flow sensors, implantable sensors)Industrial and Healthcare Systems (e.g., fluid delivery devices, temperature sensors, biosensors, flow sensors, implantable sensors)
- Internet of Things (IoT) DevicesInternet of Things (IoT) Devices
- Connectivity and Networking InfrastructureConnectivity and Networking Infrastructure
- Datacenters and High-Performance ComputingDatacenters and High-Performance Computing
- Energy and Electrification SystemsEnergy and Electrification Systems
- Memory, Logic, and Mixed-Signal ICsMemory, Logic, and Mixed-Signal ICs
- Quantum Computers (participation in ARCTIC EU project)Quantum Computers (participation in ARCTIC EU project)
- Major Markets
- Japan, China, Hong Kong, South Korea, Malaysia, Singapore, TaiwanJapan, China, Hong Kong, South Korea, Malaysia, Singapore, Taiwan
- Finland, Germany, FranceFinland, Germany, France
- United StatesUnited States
- Certifications/Patents
- ISO 9001:2015 (Quality Management System)ISO 9001:2015 (Quality Management System)
- ISO 14001:2015 (Environmental Management System)ISO 14001:2015 (Environmental Management System)
- IATF 16949:2016 (Automotive Quality Management System)IATF 16949:2016 (Automotive Quality Management System)
- Advanced Magnetic Czochralski (A-MCz®) Crystal Growth Method: A proprietary crystal growth technology enabling ultra-high resistivity wafers exceeding 10,000 Ohm-cm.Advanced Magnetic Czochralski (A-MCz®) Crystal Growth Method: A proprietary crystal growth technology enabling ultra-high resistivity wafers exceeding 10,000 Ohm-cm.
- C-SOI® (Cavity Silicon-On-Insulator) Technology: A proprietary technology featuring SOI wafers with built-in sealed cavities, streamlining MEMS device manufacturing and increasing design freedom.C-SOI® (Cavity Silicon-On-Insulator) Technology: A proprietary technology featuring SOI wafers with built-in sealed cavities, streamlining MEMS device manufacturing and increasing design freedom.
- E-SOI® (Enhanced SOI) Technology: A technology providing exceptional device layer thickness uniformity of ±0.1 μm for 200mm wafers.E-SOI® (Enhanced SOI) Technology: A technology providing exceptional device layer thickness uniformity of ±0.1 μm for 200mm wafers.
- Terrace Free SOI Technology: A technology that maximizes the usable area of SOI wafers and increases the number of chips produced per wafer.Terrace Free SOI Technology: A technology that maximizes the usable area of SOI wafers and increases the number of chips produced per wafer.
Introduction
Location
Piitie 2, 01510 Vantaa, Finland
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