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코리아바큠테크

031-987-6320
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코리아바큠테크

코리아바큠테크

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시리즈

ALD


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031-987-6320

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Overview

Korea Vacuum Tech, Ltd. (KVT) is proud to introduce the latest revolutionary addition to

our product line, the ALD system.

ALD has the such advantages over other conventional deposition methods as excellent

uniform thickness, low processing temperature, and precise film thickness control.

ICP plasma enhanced atomic layer deposition has many advantages, such

as the wide process window, high film density, low impurity contents, and broad choice

of precursor chemistry and/or reactants compared to the conventional ALD and metal

organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and

developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,

KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with excellent uniformity.

The KVAC-4000L system is a hybrid system that can process ALD process and CVD

process in one chamber. The ICP type ALD process and thermal CVD process

are sufficient to produce good quality films.


Specifications (ICP type)

ITEM

Specifications

Chamber

Process & Loadlock Chamber

Substrate size

Piece to 6 inches

Substrate Heating

Temperature range: up to 752°F (400°F)

Temperature Uniformity: ±41°F (±5°C)

Base Pressure &

Operation Pressure

Less than 1.0E-3 Torr: Rotary or Dry pump

Less than 1.0E-6 Torr: Turbo Molecular Pump (Option)

Process < 10 Torr: Rotary or Dry pump

Plasma Source

ICP or CCP Type: RF Power: 300W

Gas Nozzle

2 channel

Precursors

Up to 2, Temperature: 250°C (Jacket)

Mass flow controller

Precusor: Ar(Bubbling) / Purge: Ar or N2

Reactant(Plasma): O2, NH3, H2, etc..

Auto Pressure Controller

Throttle valve & Baratron Sensor


Korea Vacuum Tech  ALD-CVD Series

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